Method for manufacturing semiconductor device

Method for manufacturing semiconductor device

  • CN 104,008,994 B
  • Filed: 01/15/2010
  • Issued: 06/09/2020
  • Est. Priority Date: 01/26/2009
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • providing a silicon substrate;

    forming one or more grooves in the silicon substrate;

    after forming one or more grooves, filling silicon dioxide into at least one part of the one or more grooves;

    recessing said silicon dioxide within said one or more grooves, said recessing causing said silicon dioxide remaining along said sidewalls of said one or more grooves to form a fence and a depression; and

    completely removing the enclosure formed along the one or more trench sidewalls, wherein the step of removing the enclosure is performed at least in part by using hydrogen gas, the hydrogen gas reacting with the silicon substrate and with the silicon dioxide to form an absorbed silicon, the absorbed silicon then reacting with the silicon dioxide to form silicon monoxide gas.

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