Immersion lithography process with filtered air method

Immersion lithography process with filtered air method

  • CN 104,037,064 B
  • Filed: 06/19/2014
  • Issued: 01/26/2018
  • Est. Priority Date: 06/19/2014
  • Status: Active Grant
First Claim
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1. A kind of 1. immersion lithography process with filtered air method, it is characterised in that including:

  • Semiconductor substrate is provided;

    In the upper surface of Semiconductor substrate and side coating bottom anti-reflection layer;

    Using dry etch process, the bottom anti-reflection layer positioned at the side is removed;

    Photoresist layer and Topcoating are sequentially formed in bottom anti-reflection layer on Semiconductor substrate upper surface is remained in.

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