Preparation method of semiconductor device

Preparation method of semiconductor device

  • CN 104,051,245 A
  • Filed: 03/11/2013
  • Published: 09/17/2014
  • Est. Priority Date: 03/11/2013
  • Status: Active Application
First Claim
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1. a preparation method for semiconductor device, comprising:

  • Semiconductor substrate is provided;

    In described Semiconductor substrate, form dummy gate;

    On the sidewall of described dummy gate, form the first skew sidewall and the second skew sidewall;

    Remove described dummy gate;

    Remove described the first skew sidewall, form the groove that critical size increases.

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