Precision Polysilicon Resistors

Precision Polysilicon Resistors

  • CN 104,064,555 A
  • Filed: 12/20/2013
  • Published: 09/24/2014
  • Est. Priority Date: 12/21/2012
  • Status: Active Application
First Claim
Patent Images

1. a precision polysilicon resistor structure, comprising:

  • There is the silicon substrate of upper surface;

    The isolation camp forming in described silicon substrate, described isolation camp is by contacting with metal gate transistor and adjacent oxide is filled, and described oxide is with respect to the described upper surface depression of described silicon substrate;

    Precision polysilicon resistor, covers above the isolation camp of filling and with the isolation camp of filling and contacts;

    Insulating material, covers described polyresistor and contacts with described polyresistor;

    Interlayer dielectric;

    AndOne or more metal closures, it penetrates described interlayer dielectric to form ohmic contact at metal-polysilicon knot place and described polyresistor.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×