Thin film transistor, array substrate and display device

Thin film transistor, array substrate and display device

  • CN 104,134,699 A
  • Filed: 07/15/2014
  • Published: 11/05/2014
  • Est. Priority Date: 07/15/2014
  • Status: Active Application
First Claim
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1. a thin-film transistor, comprise:

  • gate electrode, gate insulation layer, semiconductor layer, source electrode and drain electrode, it is characterized in that, described gate electrode comprises;

    the first area that is positioned at described source electrode side, be positioned at the second area of described drain electrode side, and zone line between described first area and described second area, wherein, described zone line covers the described semiconductor layer of setting corresponding to described zone line completely, and described first area or described second area cover the subregion of the corresponding described semiconductor layer arranging.

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