Structure and method for strain-relieved tsv

Structure and method for strain-relieved tsv

  • CN 104,137,250 A
  • Filed: 02/26/2013
  • Published: 11/05/2014
  • Est. Priority Date: 02/27/2012
  • Status: Active Application
First Claim
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1. a semiconductor element, comprising:

  • The substrate with active face;

    Be coupled to the conductive layer of described active face;

    Threading through hole, described threading through hole only extends through described substrate and has substantially invariable diameter in the length of whole threading through hole, and described threading through hole comprises conduction filling material;

    AndSeparator around described threading through hole, and described separator comprises two parts;

    near the active face of described substrate, can alleviate the groove part from the stress of described conduction filling material, and dielectric part, the composition of described groove part is different from described dielectric part.

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