Preparation method of boron-doped ultra/fine diamond monocrystal micropowder

Preparation method of boron-doped ultra/fine diamond monocrystal micropowder

  • CN 104,164,702 A
  • Filed: 08/08/2014
  • Published: 11/26/2014
  • Est. Priority Date: 08/08/2014
  • Status: Active Application
First Claim
Patent Images

1. a preparation method for surpass/meticulous diamond single crystal micro mist of boron doping, is characterized in that, step is:

  • (a);

    silicon-based substrate is carried out to pre-treatment using the substrate material as the growth of monocrystalline micro mist;

    (b);

    application hot filament CVD is to depositing to obtain homodisperse boron doped single crystal diamond particle through the pretreated described silicon-based substrate of described step (a), wherein, reactant gases is hydrogen and acetone, in described hydrogen and acetone reaction system, add boron compound, reaction pressure is 700~

    950 DEG C of 2~

    4.5kPa, described silicon-based substrate temperature;

    (c);

    adopt successively matrix removal technique, mixed acid solution removal technique and particle distil process to process the described boron doped single crystal diamond particle obtaining in described step (b), to obtain surpass/meticulous diamond single crystal micro mist of boron doping.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×