Method for manufacturing semiconductor device

Method for manufacturing semiconductor device

  • CN 104,183,540 B
  • Filed: 05/21/2013
  • Issued: 12/31/2019
  • Est. Priority Date: 05/21/2013
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • providing a semiconductor substrate, and sequentially forming an etching stop layer, a low-k dielectric layer, a buffer layer and a hard mask layer on the semiconductor substrate, wherein the buffer layer is composed of a transition material layer and a dielectric anti-reflection coating layer without nitrogen elements, which are stacked from bottom to top, and the oxygen content of the material composing the dielectric anti-reflection coating layer is less than that of SiO2Oxygen content of (a);

    forming a copper metal interconnection structure in the low-k dielectric layer, wherein the buffer layer does not have the phenomenon of side wall recession when the copper metal interconnection structure is formed;

    and forming a copper metal layer in the copper metal interconnection structure.

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