High -voltage field -effect transistor and method of making the same

High -voltage field -effect transistor and method of making the same

  • CN 104,205,338 A
  • Filed: 01/25/2013
  • Published: 12/10/2014
  • Est. Priority Date: 03/16/2012
  • Status: Active Application
First Claim
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1. a high-voltage transistor device, comprising:

  • Semiconductor substrate (1),The source area (2) of first kind conductivity and drain region (6), it is arranged in described substrate (1) apart from certain each other distance,The channel region (4) of the Second Type conductivity contrary with described first kind conductivity, it is arranged between described source area (2) and described drain region (6),Banded drift region (5), it longitudinally extends to described drain region (6) from described channel region (4), andIsolated area (9), the longitudinal extension (20) of itself and described drift region (5) is laterally laterally to limit described drift region (5),It is characterized in that;

    Described drift region (5) comprises the doping of described first kind conductivity and comprises the regulatory region (8) of the net doping with described Second Type conductivity, andDescribed drift region (5) and described regulatory region (8) are no more than the depth capacity (17) of described isolated area (9).

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