METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

  • CN 104,278,322 A
  • Filed: 05/28/2014
  • Published: 01/14/2015
  • Est. Priority Date: 07/03/2013
  • Status: Active Application
First Claim
Patent Images

1. manufacture a method for single-crystal silicon carbide, comprise the following steps:

  • Preparation has the crucible of the first side and second side contrary with described first side;

    Described first side in described crucible, arranges the solids source material for utilizing sublimation method growing silicon carbide;

    The seed crystal be made up of silicon carbide is arranged in described second side in described crucible;

    Be arranged in thermally insulated container by described crucible, described thermally insulated container has the opening of described second side towards described crucible;

    Heat described crucible, make described solids source material distil and on described seed crystal recrystallize;

    AndBy the described opening in described thermally insulated container, measure by the temperature of described second side of the described crucible heated, the described opening in described thermally insulated container has the cone-shaped inner surface that the outside towards described thermally insulated container narrows.

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