Metal finger capacitors with hybrid metal finger orientations in stack with unidirectional metal layers

Metal finger capacitors with hybrid metal finger orientations in stack with unidirectional metal layers

  • CN 104,364,903 A
  • Filed: 05/31/2013
  • Published: 02/18/2015
  • Est. Priority Date: 06/01/2012
  • Status: Active Application
First Claim
Patent Images

1. a semiconductor element (104;

  • 118), comprising;

    At the first unidirectional metal level (112 that described transistor in-core is formed;

    126;

         204), described first unidirectional metal level has the first preferred orientations (406);

    Be manufactured on the first capacitor (204 '"'"') in described first unidirectional metal level, described first capacitor comprises the alternating expression interdigital (408) that direction is parallel to described first preferred orientations;

    Be formed in described transistor in-core and the second unidirectional metal level (114 adjacent with described first unidirectional metal level;

    128;

         304), described second unidirectional metal level has second preferred orientations (410) orthogonal with described first preferred orientations;

    Be manufactured on the second capacitor (304 '"'"') in described second unidirectional metal level, described second capacitor comprises the alternating expression interdigital (412) that direction is parallel to described second preferred orientations.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×