Semiconductor device

Semiconductor device

  • CN 104,380,444 A
  • Filed: 06/18/2013
  • Published: 02/25/2015
  • Est. Priority Date: 06/29/2012
  • Status: Active Application
First Claim
Patent Images

1. a semiconductor device, comprising:

  • Gate electrode;

    The oxide semiconductor film of a part for described gate electrode is overlapped in across gate insulating film;

    Be contacted with the pair of electrodes of described oxide semiconductor film;

    AndNitride insulating film on described oxide semiconductor film,Wherein, by heating, described nitride insulating film release is less than 5 ×

    10 21molecule/cm 3hydrogen molecule and be less than 1 ×

    10 22molecule/cm 3amino molecule.

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