The composition and method that selectivity for silicon nitride material polishes

The composition and method that selectivity for silicon nitride material polishes

  • CN 104,471,015 B
  • Filed: 07/09/2013
  • Issued: 08/17/2018
  • Est. Priority Date: 07/11/2012
  • Status: Active Grant
First Claim
Patent Images

1. chemically mechanical polishing (CMP) composition from the surface of base material prior to the removal of polysilicon for selectively removingThe purposes of silicon nitride, includes the following steps:

  • (a) surface containing silicon nitride and the base material of polysilicon is contacted with polishing pad and acidic aqueous CMP composition;

    And(b) make the throwing while surface between the part and the polishing pad and the base material for keeping the CMP composition contactsOne section of relative motion is enough to abrade the time of silicon nitride from the surface between light pad and the base material;

    Wherein the CMP composition includes:

    (i) at least one particulate cerium oxide grinding agent of 0.01 to 2 weight %;

    (ii) the unsaturated nitrogen heterocyclic compound of 10 to 1000ppm at least one non-polymeric;

    (iii) 10 to 1000ppm at least one cation type polymer;

    (iv) 200 to 2000ppm polyoxyalkylene polymers, the wherein polyoxyalkylene polymers are poly- comprising poly(ethylene glycol) -co-(propylene glycol) block copolymer and poly(ethylene glycol);

    And(v) aqueous carrier thus,Wherein, the pH value of the composition is 2.3 to 4.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×