Semiconductor structure and forming method thereof

Semiconductor structure and forming method thereof

  • CN 104,599,974 A
  • Filed: 02/13/2015
  • Published: 05/06/2015
  • Est. Priority Date: 02/13/2015
  • Status: Active Application
First Claim
Patent Images

1. a formation method for semiconductor structure, is characterized in that, comprising:

  • Semiconductor substrate is provided, in described Semiconductor substrate, forms tagma;

    In described tagma, form drift region, the doping type of described drift region is contrary with the doping type in described tagma;

    Channel region is formed in described tagma, described channel region portions extends to the direction at place, described drift region, form at least one raceway groove extension area, describedly form interdigital between at least one raceway groove extension area and described drift region and distribute, the doping type of described channel region is identical with the doping type in described tagma;

    In described drift region, form isolated area, the end of at least one raceway groove extension area described is positioned at the below of described isolated area;

    Grid structure is formed at described semiconductor substrate surface;

    In the channel region of described grid structure side, form source region, in described drift region, form drain region, described drain region is positioned at the side of described isolated area away from described channel region.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×