Same-temperature growth method of laser quantum well active region on gallium nitride native substrate

Same-temperature growth method of laser quantum well active region on gallium nitride native substrate

  • CN 104,617,487 A
  • Filed: 01/12/2015
  • Published: 05/13/2015
  • Est. Priority Date: 01/12/2015
  • Status: Active Application
First Claim
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1. the equality of temperature growing method of laser quantum trap active area in gallium nitride homo-substrate, comprising:

  • Step 1, make N-shaped Ohmic electrode at the lower surface of gallium nitride homo-substrate;

    Step 2, make N-shaped homogeneity epitaxial layer at the upper surface of gallium nitride homo-substrate;

    Step 3, on N-shaped homogeneity epitaxial layer, make N-shaped AlGaN limiting layer;

    Step 4, on N-shaped AlGaN limiting layer, make N-shaped GaN ducting layer;

    Step 5, on N-shaped GaN ducting layer, make InGaN/GaN Quantum well active district, wherein the making in Quantum well active district comprises alternate epitaxial growth well layer and barrier layer at that same temperature;

    Step 6, on InGaN/GaN Quantum well active district, make p-type AlGaN electronic barrier layer;

    Step 7, on p-type AlGaN electronic barrier layer, make p-type GaN ducting layer;

    Step 8, on p-type GaN ducting layer, make p-type AlGaN limiting layer;

    Step 9, on p-type AlGaN limiting layer, make the heavily doped contact layer of p-type doping/p-type;

    Step 10, make p-type Ohmic electrode at the upper surface of the heavily doped contact layer of p-type doping/p-type;

    Step 11, from the upper surface of the heavily doped contact layer of p-type doping/p-type, make ridge structure, between the upper and lower surface being etched down to p-type AlGaN limiting layer, form ridge structure.

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