Semiconductor device

Semiconductor device

  • CN 104,620,390 A
  • Filed: 09/02/2013
  • Published: 05/13/2015
  • Est. Priority Date: 09/13/2012
  • Status: Active Application
First Claim
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1. a semiconductor device, comprising:

  • Substrate;

    The first dielectric film on described substrate;

    The second dielectric film on described first dielectric film, described second dielectric film comprises the first oxidation insulating film and is laminated in the first nitride insulating film on described first oxidation insulating film;

    Optically transparent electrode on described second dielectric film;

    Transistor, comprising;

    Gate electrode;

    Described first dielectric film on described gate electrode;

    AndOn described first dielectric film with the metal-oxide semiconductor (MOS) film of described gate electrode;

    Capacitor, comprising;

    The light transmitting conductive film being used as the first capacitance electrode on described first dielectric film;

    The part being used as described second dielectric film of capacitive dielectric film on described light transmitting conductive film;

    AndThe described optically transparent electrode being used as the second capacitance electrode in a described part for described second dielectric film,Wherein, described metal-oxide semiconductor (MOS) film and described light transmitting conductive film use same film to be formed,Described first oxidation insulating film is on described metal-oxide semiconductor (MOS) film and be in contact with it,Further, described first nitride insulating film to be in contact with it and overlapping with described metal-oxide semiconductor (MOS) film on described light transmitting conductive film.

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