Thin film transistor and manufacturing method of thin film transistor, array substrate and manufacturing method of array substrate, and display device

Thin film transistor and manufacturing method of thin film transistor, array substrate and manufacturing method of array substrate, and display device

  • CN 104,638,016 A
  • Filed: 01/28/2015
  • Published: 05/20/2015
  • Est. Priority Date: 01/28/2015
  • Status: Active Application
First Claim
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1. a preparation method for thin-film transistor, is included on substrate and forms grid, gate insulation layer, metal-oxide semiconductor (MOS) active layer, source electrode and drain electrode;

  • It is characterized in that, described formation metal-oxide semiconductor (MOS) active layer, comprising;

    Described metal-oxide semiconductor (MOS) active layer is formed by electrochemical reaction.

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