Preparation method for TSV (Through Silicon Via) redistribution layer based on AIN (Aluminium Nitride) modified polymer composite dielectric

Preparation method for TSV (Through Silicon Via) redistribution layer based on AIN (Aluminium Nitride) modified polymer composite dielectric

  • CN 104,681,485 A
  • Filed: 01/16/2015
  • Published: 06/03/2015
  • Est. Priority Date: 01/16/2015
  • Status: Active Application
First Claim
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1. , based on a TSV redistributing layer preparation method for the polymer-modified complex media of AlN, it is characterized in that, comprise the following steps:

  • (1) liquid organic polymer dielectric precursor and AlN powder are fully mixed, AlN powder is dispersed in organic polymer dielectric material, obtains mixed slurry;

    (2) in TSV wafer, prepare redistributing layer wiring and upper/lower layer metallic joint pin;

    (3) mixed slurry prepared by step (1) is evenly coated in the crystal column surface that distribution interconnect line has more completed;

    (4) the above-mentioned mixed slurry of baking and curing, forms the polymer compound medium layer of AlN modification;

    (5) grinding-flatening process is carried out to shaping compound medium layer, expose metal joint pin, namely complete the preparation of individual layer redistributing layer;

    (6) repeat step (2) and namely obtain the wiring of multilayer redistributing layer to step (4).

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