Preparation method of monocrystalline garnet thick film

Preparation method of monocrystalline garnet thick film

  • CN 104,775,160 A
  • Filed: 04/27/2015
  • Published: 07/15/2015
  • Est. Priority Date: 04/27/2015
  • Status: Active Application
First Claim
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1. a preparation method for monocrystalline garnets thick film, comprises the following steps:

  • Step 1;

    precise Tm 2o 3, Ga 2o 3, Fe 2o 3, Bi 2o 3raw material, wherein, Tm 2o 3, Ga 2o 3, Fe 2o 3, Bi 2o 3mol ratio be 1;

    1;

    9.62;

    52.12;

    Batch mixing;

    Melt;

    Step 2;

    cleaning substrate;

    Step 3;

    melt put into by the substrate after step 2 being cleaned, controlling substrate rotating speed is 60 revs/min, drops to growing film in the process of 930 DEG C at 935 DEG C, and after having grown, cleaning is removed residual, obtains monocrystalline garnets thick film of the present invention.

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