Semiconductor device manufacturing method

Semiconductor device manufacturing method

  • CN 104,779,148 A
  • Filed: 01/14/2014
  • Published: 07/15/2015
  • Est. Priority Date: 01/14/2014
  • Status: Active Application
First Claim
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1. make a method for semiconductor device, comprising:

  • Step a;

    Semiconductor substrate is provided;

    Form dummy gate on the semiconductor substrate, described dummy gate comprises dummy gate material layer and dummy gate oxide layer;

    Step b;

    the described dummy gate material layer removing part;

    Step c;

    remove remaining described dummy gate material layer, to expose described dummy gate oxide layer;

    Steps d;

    remove described dummy gate oxide layer, to form metal gates groove;

    Wherein, after step a, at least carry out a nitrogen treatment step before steps d and/or after steps d before step c, after step c before step b, after step b, to make the surface doping nitrogen of described Semiconductor substrate.

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