Semiconductor structure and manufacturing method thereof

Semiconductor structure and manufacturing method thereof

  • CN 104,810,389 A
  • Filed: 01/23/2014
  • Published: 07/29/2015
  • Est. Priority Date: 01/23/2014
  • Status: Active Application
First Claim
Patent Images

1. semiconductor structure, comprises;

  • One substrate;

    At least one fin structure group and multiple fin structures, be positioned in this substrate, and wherein this fin structure group is between two fin structures, and an end face of each fin structure is lower than an end face of this fin structure group;

    AndShallow isolating trough, is arranged in this substrate, and this shallow isolating trough is made up of an insulating barrier, and respectively this fin structure is covered completely by this shallow isolating trough.

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