Reflective bank structure of light emitting device

Reflective bank structure of light emitting device

  • CN 104,838,508 B
  • Filed: 12/03/2013
  • Issued: 08/21/2020
  • Est. Priority Date: 12/10/2012
  • Status: Active Grant
First Claim
Patent Images

1. A light emitting diode bank structure comprising:

  • a substrate;

    an array of electrically conductive pads on the substrate;

    an insulating layer on the substrate;

    an array of bank openings in the insulating layer, each bank opening comprising a bottom surface and a sidewall;

    a corresponding array of vertical light emitting diode devices transferred to and mounted on the array of electrically conductive pads within the array of bank openings, wherein each vertical light emitting device in the array of vertical light emitting diode devices has a maximum width of 1-100 μ

    m and comprises a miniature p-n diode comprising a top p-doped or n-doped layer, a lower p-doped or n-doped layer, and one or more quantum well layers located between the top p-doped or n-doped layer and the lower p-doped or n-doped layer, and wherein the miniature p-n diode comprises one or more layers based on a group II-VI material or a group III-V material; and

    a passivation layer spanning sidewalls of the array of vertical light emitting diode devices and at least partially filling the array of bank openings.

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