Increasing the ION/IOFF ratio of nanowires and FINFETs

Increasing the ION/IOFF ratio of nanowires and FINFETs

  • CN 104,854,685 B
  • Filed: 12/17/2013
  • Issued: 01/01/2021
  • Est. Priority Date: 12/17/2012
  • Status: Active Grant
First Claim
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1. An integrated circuit transistor structure comprising:

  • a body of semiconductor material having longitudinally spaced apart doped first and second source/drain regions and further having at least first, second and third surfaces which are non-coplanar with one another, the body further having a channel region extending longitudinally from the first source/drain region to the second source/drain region;

    a gate conductor disposed outside the body, the gate conductor having a second portion facing the second surface and positioned longitudinally at least partially along at least a portion of the channel region, the gate conductor having a first portion facing the first surface, a second portion facing the second surface, and a third portion facing the third surface; and

    a dielectric material between the gate conductor and each of the first, second, and third surfaces of the body,the body including an adjustment region longitudinally within the channel region and spaced behind the first surface and behind each of the second and third surfaces by a first distance, and longitudinally spaced apart from the first and second source/drain regions,wherein the adjustment region comprises adjustment region material having, at each longitudinal location, a conductivity that differs in value from adjacent body material at the same longitudinal location at least when the transistor is in an off-state, anWherein the adjustment region material comprises a dielectric.

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