Thin film transistor, method of manufacturing the same, and display device including the same

Thin film transistor, method of manufacturing the same, and display device including the same

  • CN 104,854,706 B
  • Filed: 12/11/2013
  • Issued: 10/16/2020
  • Est. Priority Date: 12/12/2012
  • Status: Active Grant
First Claim
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1. A thin film transistor, comprising:

  • an oxide semiconductor layer having a source region, a drain region, and a channel region disposed between the source region and the drain region, an insulating layer, a gate electrode, a source electrode, and a drain electrode, which are formed on a substrate in a coplanar configuration;

    a first conductive member directly contacting the source region of the oxide semiconductor layer and directly contacting the source electrode; and

    a second conductive member directly contacting the drain region of the oxide semiconductor layer and directly contacting the drain electrode, wherein the first conductive member and the second conductive member are arranged to reduce resistance between the channel region of the oxide semiconductor layer and the source and drain electrodes;

    wherein a first distance from an end of the first conductive member that is in contact with the source and that faces the channel region of the oxide semiconductor to a source-side end of the channel region of the oxide semiconductor is equal to or smaller than a contact distance, and a second distance from an end of the second conductive member that is in contact with the drain and that faces the channel region of the oxide semiconductor to a drain-side end of the channel region of the oxide semiconductor is equal to or smaller than the contact distance,wherein the contact distance is a shortest distance at which electrons in the oxide semiconductor can move between the first conductive member and the channel region of the oxide semiconductor or between the second conductive member and the channel region of the oxide semiconductor, andwherein the source is in contact with the first conductive member at a first contact region and the first conductive member extends away from the first contact region toward the gate, the drain is in contact with the second conductive member at a second contact region and the second conductive member extends away from the second contact region toward the gate.

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