Preparation methods of polysilicon film and semiconductor device, and display substrate and apparatus

Preparation methods of polysilicon film and semiconductor device, and display substrate and apparatus

  • CN 104,867,812 A
  • Filed: 03/27/2015
  • Published: 08/26/2015
  • Est. Priority Date: 03/27/2015
  • Status: Active Application
First Claim
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1. a preparation method for polysilicon membrane, is characterized in that, comprising:

  • Substrate forms resilient coating;

    At the first groove of the surperficial formation rule arrangement of described resilient coating;

    Described resilient coating forms amorphous silicon membrane;

    Optics annealing process is adopted to carry out crystallization treatment to described amorphous silicon membrane, to form polysilicon membrane.

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