METHOD FOR MEASURING RECOMBINATION LIFETIME OF SILICON SUBSTRATE

METHOD FOR MEASURING RECOMBINATION LIFETIME OF SILICON SUBSTRATE

  • CN 104,871,302 A
  • Filed: 12/27/2013
  • Published: 08/26/2015
  • Est. Priority Date: 02/15/2013
  • Status: Active Application
First Claim
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1. silicon substrate again in conjunction with a biometrics method, its be chemical passivation process is carried out to the surface of silicon substrate after, measure again in conjunction with the method in life-span, it is characterized in that,From described chemical passivation process to described terminate in conjunction with the mensuration in life-span again during, at least carry out protecting described silicon substrate by the ultraviolet protection process of Ultraviolet radiation.

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