A kind of etching solution of the low-tension for ITO/Ag/ITO film

A kind of etching solution of the low-tension for ITO/Ag/ITO film

  • CN 104,893,728 B
  • Filed: 04/10/2015
  • Issued: 11/27/2018
  • Est. Priority Date: 04/10/2015
  • Status: Active Grant
First Claim
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1. a kind of etching solution of the low-tension for ITO/Ag/ITO plural layers, it is characterised in that:

  • The etching solution is by gross weightMeasure 10%~30% acetic acid, 10.5%~20% nitric acid, 40%~70% phosphoric acid, 0.1~0.5% surfactantNitrate with 0.1~5% forms, and surplus is deionized water;

    The surfactant is polyoxyethylene.

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