Sputtering target and method for manufacturing same

Sputtering target and method for manufacturing same

  • CN 104,919,080 A
  • Filed: 03/27/2014
  • Published: 09/16/2015
  • Est. Priority Date: 07/08/2013
  • Status: Active Application
First Claim
Patent Images

1. a sputtering target, it contains Cu with 5wtppm ~ 10000wtppm, and remainder is made up of In, and relative density is more than 99%, and average crystallite particle diameter is less than 3000 μ

  • m.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×