Semiconductor structure and manufacturing method thereof

Semiconductor structure and manufacturing method thereof

  • CN 104,952,841 A
  • Filed: 03/26/2015
  • Published: 09/30/2015
  • Est. Priority Date: 03/27/2014
  • Status: Active Application
First Claim
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1. a semiconductor structure, comprising:

  • Substrate;

    Conductive interconnect, exposes from described substrate;

    Passivation part, covers the part of described substrate and described conductive interconnect;

    Underbump metallization (UBM) pad, to be arranged on above described passivation part and to contact with the expose portion of described conductive interconnect;

    AndConductor, is arranged on above described UBM pad,Wherein, described conductor comprises end face, extends and comprise the first inclined outer surface of the first gradient and extend to described UBM pad from the end of described first inclined outer surface and comprise the second inclined outer surface of the second gradient from described end face, and described second gradient is less than described first gradient substantially.

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