Bi-grid TFT (thin film transistor) substrate manufacturing method and bi-grid TFT substrate structure

Bi-grid TFT (thin film transistor) substrate manufacturing method and bi-grid TFT substrate structure

  • CN 104,952,880 A
  • Filed: 05/06/2015
  • Published: 09/30/2015
  • Est. Priority Date: 05/06/2015
  • Status: Active Application
First Claim
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1. the manufacture method of a bigrid TFT substrate, it is characterized in that, first on substrate (1), make bottom-gate (2), the first insulating barrier (3), protruding semiconductor layers (4), the second insulating barrier (5) successively;

  • Then depositing second metal layer, carries out patterned process by one light shield to the second metal level, forms source electrode (61), drain electrode (62) and top grid (63) simultaneously;

    Make the 3rd insulating barrier (7) and pixel electrode (8) successively again.

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