Semiconductor structure and manufacturing method thereof

Semiconductor structure and manufacturing method thereof

  • CN 104,952,915 A
  • Filed: 03/31/2014
  • Published: 09/30/2015
  • Est. Priority Date: 03/31/2014
  • Status: Active Application
First Claim
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1. a semiconductor structure, comprising:

  • An adjoining first grid structure and a second gate structure, respectively comprise the first dielectric gap wall;

    AndSecond dielectric gap wall, in the opposing sidewalls being positioned at this first grid structure this first dielectric gap on one of them, and is not configured on this first dielectric gap wall of this second gate structure.

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