Data write-in method, memory control circuit unit and memory storage device

Data write-in method, memory control circuit unit and memory storage device

  • CN 104,978,149 A
  • Filed: 04/11/2014
  • Published: 10/14/2015
  • Est. Priority Date: 04/11/2014
  • Status: Active Application
First Claim
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1. a method for writing data, for a reproducible nonvolatile memorizer module, it is characterized in that, this reproducible nonvolatile memorizer module has multiple physics erased cell, each those physics erased cell has multiple physical procedures unit, and this method for writing data comprises:

  • A physics erased cell is extracted as one first effect physics erased cell from those physics erased cell of this reproducible nonvolatile memorizer module;

    Another physics erased cell is extracted as one second effect physics erased cell from those physics erased cell of this reproducible nonvolatile memorizer module;

    The multiple logical blocks being configured at this reproducible nonvolatile memorizer module are divided into one first district and at least one secondth district;

    By one first Data programming to this first effect physics erased cell, wherein these first data are stored to one first logical block among those logical blocks and this first logical block belongs to this firstth district by the instruction of this host computer system;

    By one second Data programming to this second effect physics erased cell, wherein these second data are stored to one second logical block among those logical blocks and this second logical block belongs to this secondth district by the instruction of this host computer system;

    AndBy one the 3rd Data programming to this second effect physics erased cell, wherein the 3rd data are stored to 1 among those logical blocks the 3rd logical block and the 3rd logical block belongs to this secondth district by the instruction of this host computer system.

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