A kind of manufacturing method of semiconductor devices

A kind of manufacturing method of semiconductor devices

  • CN 104,979,294 B
  • Filed: 04/10/2014
  • Issued: 10/25/2019
  • Est. Priority Date: 04/10/2014
  • Status: Active Grant
First Claim
Patent Images

1. a kind of manufacturing method of semiconductor devices, which is characterized in that the described method includes:

  • Step S101;

    semiconductor substrate is provided, is respectively formed in the NMOS area of the semiconductor substrate and the area PMOS including pseudo- gridThe dummy gate structure of pole and the hard exposure mask of dummy grid, wherein the material of the hard exposure mask of the dummy grid is the silicon nitride rich in nitrogen;

    Step S102;

    forming the masking material bed of material for covering the semiconductor substrate and the hard exposure mask of the dummy grid, wherein describedThe material of the masking material bed of material is the silicon nitride rich in nitrogen;

    Step S103;

    the masking material bed of material is performed etching to form the germanium silicon shielding layer of covering NMOS area and be located at PMOSDummy grid two sides the interim side wall of germanium silicon;

    Step S104;

    it is formed in the semiconductor substrate positioned at the dummy grid two sides of PMOS for accommodating the ditch of germanium silicon layerSlot;

    Step S105;

    in the groove formed germanium silicon layer, wherein the silicon nitride rich in nitrogen as the hard exposure mask of dummy grid withThe masking material bed of material can avoid in germanium silicon technology in the germanium silicon shielding layer and the interim side wall of germanium silicon and the hard exposure mask of dummy gridSurface on form improper germanium silicon particle.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×