A kind of method for reducing surface light reflectivity of silicon chip

A kind of method for reducing surface light reflectivity of silicon chip

  • CN 104,992,990 B
  • Filed: 01/12/2011
  • Issued: 05/11/2018
  • Est. Priority Date: 12/30/2010
  • Status: Active Grant
First Claim
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1. A kind of 1. method for reducing surface light reflectivity of silicon chip, it is characterised in that include the following steps:

  • Step 1:

    Silicon chip is immersed to the mixing being made of hydrofluoric acid and the salt containing Ag ions, Cu ions, Ni ions or Mg ionsPerformed etching in solution;

    AndStep 2:

    Silicon chip after etching is put into nitric acid or chloroazotic acid and is cleaned to remove the metal covering on surface, it is obtainedThe surface of silicon chip is nano-porous structure;

    Wherein, the concentration of the hydrofluoric acid is 0.5mol/L -10mol/L, it is described containing Ag ions, Cu ions, Ni ions orThe concentration of the salt of Mg ions is 0.01mol/L -0.5mol/L, and the depth of the etching is 100nm -2 μ

    m.

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