Ultraviolet light emitting diode epitaxial wafer and manufacturing method thereof

Ultraviolet light emitting diode epitaxial wafer and manufacturing method thereof

  • CN 105,047,775 A
  • Filed: 05/29/2015
  • Published: 11/11/2015
  • Est. Priority Date: 05/29/2015
  • Status: Active Application
First Claim
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1. a ultraviolet light-emitting diode epitaxial wafer, described ultraviolet light-emitting diode epitaxial wafer comprises substrate, and the resilient coating stacked gradually over the substrate, layer of undoped gan, N-type layer, multiple quantum well layer, P-type layer, described multiple quantum well layer comprises AlGaN layer and the InGaN layer of alternating growth, it is characterized in that, described ultraviolet light-emitting diode epitaxial wafer also comprises the graphical reflector layer be layered between described substrate and described resilient coating, described graphical reflector layer comprises Al film and is layered in the AlN layer on described Al film, the described resilient coating of part is directly over the substrate stacked.

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