Manufacture method of semiconductor device

Manufacture method of semiconductor device

  • CN 105,097,484 A
  • Filed: 04/21/2014
  • Published: 11/25/2015
  • Est. Priority Date: 04/21/2014
  • Status: Active Application
First Claim
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1. a manufacture method for semiconductor device, is characterized in that, described method comprises:

  • Step S101;

    provide Semiconductor substrate, forms the dummy grid of PMOS, the hard mask of dummy grid and skew sidewall on the semiconductor substrate;

    Step S102;

    form germanium silicon shielding layer on the semiconductor substrate, and formation covers the photoresist layer that it is positioned at the part beyond PMOS district on described germanium silicon shielding layer;

    Step S103;

    by being dry-etched in the bowl-shape groove being formed in described Semiconductor substrate and be positioned at the dummy grid both sides of described PMOS;

    Step S104;

    carry out etching reprocessing to remove the large molecule produced in described dry etching process;

    Step S105;

    carry out wet etching to form Σ

    shape groove on the basis of described bowl-shape groove;

    Step S106;

    form germanium silicon layer in described Σ

    shape groove.

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