Fin type field effect transistor formation method

Fin type field effect transistor formation method

  • CN 105,097,518 A
  • Filed: 04/30/2014
  • Published: 11/25/2015
  • Est. Priority Date: 04/30/2014
  • Status: Active Application
First Claim
Patent Images

1. a formation method for fin field effect pipe, is characterized in that, comprising:

  • There is provided substrate, described substrate surface is formed with some discrete fins;

    Adopt depositing operation to form the screen being covered in described fin portion surface, and the reacting gas of described depositing operation comprises main source gas and oxygen source gas, wherein, main source gas is the gas containing fin material atom;

    Photoresist film is formed on described screen surface;

    Exposure-processed and development treatment are carried out to described photoresist film, forms patterned photoresist layer;

    With described patterned photoresist layer for mask, doping process is carried out to part fin;

    Remove described patterned photoresist layer;

    Remove described screen.

View all claims

    Thank you for your feedback