Method for manufacturing semiconductor device

Method for manufacturing semiconductor device

  • CN 105,097,539 A
  • Filed: 05/21/2014
  • Published: 11/25/2015
  • Est. Priority Date: 05/21/2014
  • Status: Active Application
First Claim
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1. make a method for semiconductor device, comprising:

  • Semiconductor substrate is provided, described Semiconductor substrate forms grid structure;

    Form the side wall surrounding grid on the semiconductor substrate;

    Exposure forms the photoresist layer only exposing PMOS area on the semiconductor substrate;

    Semiconductor substrate described in anisotropic etching thus source-drain area formed groove;

    Isotropism continues the described groove of etching;

    Perform post-etch treatment process;

    Groove described in wet etching.

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