FinFET and its manufacturing method

FinFET and its manufacturing method

  • CN 105,097,556 B
  • Filed: 11/30/2012
  • Issued: 02/15/2019
  • Est. Priority Date: 11/30/2012
  • Status: Active Grant
First Claim
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1. a kind of method of manufacturing semiconductor devices, comprising:

  • Semiconductor fin structure is formed on a semiconductor substrate;

    Dopant layer is formed at a certain distance from the top surface on the side of fin structure apart from fin structure;

    AndBy in the dopant push-in fin structure in dopant layer, break-through trapping layer is formed,Wherein, it includes;

    by heat treatment that the dopant by dopant layer, which is pushed into fin structure, and being based on diffusion willDopant is pushed into fin structure.

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