Manufacture method of semiconductor device

Manufacture method of semiconductor device

  • CN 105,097,645 A
  • Filed: 04/22/2014
  • Published: 11/25/2015
  • Est. Priority Date: 04/22/2014
  • Status: Active Application
First Claim
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1. a manufacture method for semiconductor device, comprising:

  • Semiconductor substrate is provided, in described Semiconductor substrate, forms silicon through hole;

    Preliminary treatment is implemented to described silicon through hole, and deposits formation first laying and the second laying successively at the sidewall of described silicon through hole and bottom;

    Nitrogen treatment is implemented to described second laying, and deposition forms the cover layer covering described second laying.

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