Preparation method of semiconductor device

Preparation method of semiconductor device

  • CN 105,097,694 B
  • Filed: 05/21/2014
  • Issued: 06/09/2020
  • Est. Priority Date: 05/21/2014
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, comprising:

  • providing a semiconductor substrate, wherein an NMOS region and a PMOS region are formed on the semiconductor substrate, and an NMOS gate structure and a PMOS gate structure are respectively formed on the NMOS region and the PMOS region;

    performing source-drain ion implantation on two sides of the NMOS gate structure and the PMOS gate structure;

    forming grooves in the semiconductor substrate on two sides of the PMOS gate structure, and epitaxially growing a stress layer and a second semiconductor material layer in the grooves;

    carrying out pre-cleaning treatment on the surface of the semiconductor substrate to remove the amorphous substances formed in the ion implantation step and remove the second semiconductor material layer at the same time;

    and epitaxially growing the first semiconductor material layer on the semiconductor substrate on two sides of the NMOS gate structure and the stress layer on two sides of the PMOS gate structure.

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