A method of accurately controlling SiC monodimension nanometer materials

A method of accurately controlling SiC monodimension nanometer materials

  • CN 105,129,803 B
  • Filed: 08/19/2015
  • Issued: 09/14/2018
  • Est. Priority Date: 08/19/2015
  • Status: Active Grant
First Claim
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1. a kind of method accurately controlling SiC monodimension nanometer materials, it is characterised in that:

  • Include the following steps,Precursor prepares;

    Raw material is crushed after heat cross-linking cures and is obtained, the raw material is at least containing Si and C elementOrganic matterCatalyst is introduced matrix by substrate pretreated;

    Nanowire growth, by above-mentioned matrix and precursor, in the case where protecting atmosphere, constant pressure is sintered, and is warming up to pyrolysis temperature, heating rateFor 20-40 DEG C/min, and heating rate is constant in temperature-rise period, pyrolysis time 5-30min, and pyrolysis precursor is in baseBody surface face forms SiC monodimension nanometer materials, and wherein SiC monodimension nanometer materials include ontology and are formed in the head of body endPortion:

    When pyrolysis temperature is 1600 DEG C, SiC monodimension nanometer materials are in integrally triangular prism structure, and there is "the" shape fluctuating on surface, veryIt is coarse;

    When pyrolysis temperature is 1650 DEG C, SiC monodimension nanometer materials are in integrally triangular prism structure, and surface is more smooth;

    It is cooling.

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