Preparation method of strain SiGe channel groove type grid CMOS integrated device based on GOI
Preparation method of strain SiGe channel groove type grid CMOS integrated device based on GOI
- CN 105,140,185 A
- Filed: 08/28/2015
- Published: 12/09/2015
- Est. Priority Date: 08/28/2015
- Status: Active Application
- EN CH
-
- Pin
