Semiconductor Photodetection Element

Semiconductor Photodetection Element

  • CN 105,140,315 A
  • Filed: 02/15/2010
  • Published: 12/09/2015
  • Est. Priority Date: 02/24/2009
  • Status: Active Application
First Claim
Patent Images

1. a semiconductor light detecting element, is characterized in that:

  • Possess;

    Silicon substrate, has the pn formed by the semiconductor regions of the semiconductor regions of the 1st conduction type and the 2nd conduction type and ties,On described silicon substrate, be formed with the accumulation layer of the 1st conduction type in an interarea side of this silicon substrate, and at least tying with described pn on a described interarea relative region is formed with make the travel distance of light elongated irregular concavo-convex,Tying relative described area optical with described pn and expose on a described interarea of described silicon substrate,Irregular described concavo-convex difference of height is 0.5 ~ 10 μ

    m, irregular described concavo-convex in protuberance be spaced apart 0.5 ~ 10 μ

    m,Being formed with an irregular described concavo-convex described interarea is light entrance face, advance in described silicon substrate from the light of a described interarea incidence, the described light of advancing in described silicon substrate by irregularly describedly concavo-convexly carrying out reflecting, scattering or diffusion, and described semiconductor light detecting element is back surface incident type.

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