Wide band gap high density semiconductor switching device and method of manufacturing the same

Wide band gap high density semiconductor switching device and method of manufacturing the same

  • CN 105,206,681 B
  • Filed: 05/06/2015
  • Issued: 12/08/2020
  • Est. Priority Date: 06/20/2014
  • Status: Active Grant
First Claim
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1. A switching device, comprising:

  • a body made of a semiconductor material, having a planar surface and a bulk portion of a first conductivity type;

    an implanted switching region of a second conductivity type extending in the body from the surface to a first depth;

    a non-mask implanted surface portion extending in the body from the surface to a second depth, the second depth being less than the first depth, the implanted surface portion extending between a respective pair of the implanted switching regions and being of the first conductivity type, the implanted surface portion having a higher conductivity level than the bulk portion and being sandwiched between and defined by the respective pair of the implanted switching regions;

    a Schottky contact metal portion on the surface and in direct contact with the implanted surface portion; and

    an ohmic contact metal on the surface and in direct contact with the implanted switching region,wherein the Schottky contact metal portion and the ohmic contact metal portion are respective portions of a first metal layer having uniform chemical-physical properties, the first metal layer is a single continuous layer over the implanted surface portion and the implanted switching region, and portions of the first metal layer that have not reacted with the semiconductor material of the body are removed,wherein the non-mask implanted surface portion and the first metal layer form respective Schottky barriers having a height between 1.2eV and 1.4eV, andwherein the first metal layer has a first thickness and the switching device includes a second metal layer overlying the first metal layer and having a second thickness greater than the first thickness.

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