The p-type doping of the III-th family nitride buffer layer structure on hetero-substrates

The p-type doping of the III-th family nitride buffer layer structure on hetero-substrates

  • CN 105,229,207 A
  • Filed: 02/14/2014
  • Published: 01/06/2016
  • Est. Priority Date: 02/15/2013
  • Status: Active Application
First Claim
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1. the extension III-th family nitride buffer layer structure on hetero-substrates, wherein said buffer layer structure comprises at least one stress management sequence of layer, described stress management sequence of layer comprises interstratified structure between the first and second III-th family nitride layers and adjacent with the first and second III-th family nitride layers, wherein said interstratified structure comprise there is the band gap larger than the material of described first and second III-th family nitride layers III-th family nitride between layer material, and wherein p-type dopant concentration distribution by least 1 ×

  • 10 18cm -3start to the transition of described first and second III-th family nitride layers, reducing at least 2 times by described interstratified structure.

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