Data processing method and device for FLASH memory

Data processing method and device for FLASH memory

  • CN 105,260,320 B
  • Filed: 10/12/2015
  • Issued: 06/16/2020
  • Est. Priority Date: 10/12/2015
  • Status: Active Grant
First Claim
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1. A data processing method for a FLASH memory, comprising:

  • detecting whether the data erasing times of the first sector exceed a preset threshold value or not;

    generating an offset address when detecting that the data erasing times of the first sector exceeds the preset threshold;

    adding the offset address to a first address to obtain a second address, wherein the first address is the address of the first sector; and

    performing data erasing on a second sector corresponding to the second address;

    when detecting that an offset address is generated in the day of a first date, setting a fourth area in the first sector for storing the offset address, when data of the first date needs to be read, firstly finding the first address according to the corresponding relation between the first date and the first address, then linking to a second address according to the offset address stored in the first sector, wherein the second address is the address pointed by the offset address added to the first address, and reading the data of the first date is realized by reading the data stored in the sector corresponding to the second address;

    when detecting that the number of data erasing times of the first sector exceeds the preset threshold, marking the counting identifier of the first sector as a preset identifier, wherein the preset identifier is used for identifying that the number of data erasing times of the first sector reaches the preset threshold.

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