Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

  • CN 105,261,644 A
  • Filed: 07/16/2014
  • Published: 01/20/2016
  • Est. Priority Date: 07/16/2014
  • Status: Active Application
First Claim
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1. a semiconductor device, is characterized in that, this semiconductor device comprises:

  • Semi-conductor layer;

    One channel shaped is formed in an end face of this semiconductor layer, and this groove has;

    One bottom surface;

    AndOne sidewall;

    This bottom surface of this groove is located in one drain region;

    One source pole district is located at this end face of this semiconductor layer, and and this drain region there is interval;

    One first insulator is located in this groove, between this drain region and this source area, and contacts with this bottom surface of this groove and this sidewall;

    AndOne second insulator is located between this drain region and this source area, and is positioned on this end face of this semiconductor layer.

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