Photoresist composition and method for forming photolithographic pattern

Photoresist composition and method for forming photolithographic pattern

  • CN 105,301,900 A
  • Filed: 11/16/2015
  • Published: 02/03/2016
  • Est. Priority Date: 11/16/2015
  • Status: Active Application
First Claim
Patent Images

1. a photoetching compositions, it is characterized in that, described photoetching compositions is by weight being polyether-modified organosilicon levelling agent 0.4-0.55 part, solvent 20-23 part, optical active substance 2-3 part, organic acid 1-2 part, resin 16-18 part and pigment dispersion 20-21 part.

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