Selective Formation of Conductor Nanowires

Selective Formation of Conductor Nanowires

  • CN 105,304,555 A
  • Filed: 09/01/2014
  • Published: 02/03/2016
  • Est. Priority Date: 06/13/2014
  • Status: Active Application
First Claim
Patent Images

1. a method, comprising:

  • Etching mandrel layer is to form mandrel band;

    Optionally plated metal line on the sidewall of described mandrel band, wherein, described optionally between depositional stage, shelters the end face of described mandrel band by dielectric mask;

    Remove described mandrel layer and described dielectric mask;

    The gap between described metal wire is filled with dielectric material;

    In described dielectric material, form via openings, the end face of described metal wire is exposed to described via openings;

    AndWith via openings described in filled with conductive material to form through hole.

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